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Other articles related with "field plate"：
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88502 |
Ke-Xiu Dong(董可秀), Dun-Jun Chen(陈敦军), Qing Cai(蔡青), Yan-Li liu(刘燕丽), Yu-Jie Wang(王玉杰) |
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Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure |
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Chin. Phys. B
2020 Vol.29 (8): 88502-088502
[Abstract]
(530)
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[PDF 1901 KB]
(94)
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127302 |
Hui Wang(王辉), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Si-Qi Lei(雷思琦), Hong-Yu Yu(于洪宇) |
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A simulation study of field plate termination in Ga2O3 Schottky barrier diodes |
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Chin. Phys. B
2018 Vol.27 (12): 127302-127302
[Abstract]
(624)
[HTML 1 KB]
[PDF 650 KB]
(177)
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67402 |
Bin Wang(王斌), He-Ming Zhang(张鹤鸣), Hui-Yong Hu(胡辉勇), Xiao-Wei Shi(史小卫) |
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Enhancement of off-state characteristics in junctionless field effect transistor using a field plate |
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Chin. Phys. B
2018 Vol.27 (6): 67402-067402
[Abstract]
(693)
[HTML 0 KB]
[PDF 628 KB]
(196)
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17303 |
Wei Mao(毛维), Wei-Bo She(佘伟波), Cui Yang(杨翠), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Yue Hao(郝跃) |
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Reverse blocking characteristics and mechanisms in Schottky-drainAlGaN/GaN HEMT with a drain field plate and floating field plates |
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Chin. Phys. B
2016 Vol.25 (1): 17303-017303
[Abstract]
(680)
[HTML 1 KB]
[PDF 1923 KB]
(635)
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127303 |
Shi Xian-Long (石先龙), Luo Xiao-Rong (罗小蓉), Wei Jie (魏杰), Tan Qiao (谭桥), Liu Jian-Ping (刘建平), Xu Qing (徐青), Li Peng-Cheng (李鹏程), Tian Rui-Chao (田瑞超), Ma Da (马达) |
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A novel LDMOS with a junction field plate and a partial N-buried layer |
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Chin. Phys. B
2014 Vol.23 (12): 127303-127303
[Abstract]
(707)
[HTML 1 KB]
[PDF 620 KB]
(617)
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97305 |
Zhao Sheng-Lei (赵胜雷), Wang Yuan (王媛), Yang Xiao-Lei (杨晓蕾), Lin Zhi-Yu (林志宇), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors |
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Chin. Phys. B
2014 Vol.23 (9): 97305-097305
[Abstract]
(592)
[HTML 1 KB]
[PDF 1027 KB]
(903)
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77306 |
Luo Yin-Chun (罗尹春), Luo Xiao-Rong (罗小蓉), Hu Gang-Yi (胡刚毅), Fan Yuan-Hang (范远航), Li Peng-Cheng (李鹏程), Wei Jie (魏杰), Tan Qiao (谭桥), Zhang Bo (张波) |
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A low specific on-resistance SOI LDMOS with a novel junction field plate |
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Chin. Phys. B
2014 Vol.23 (7): 77306-077306
[Abstract]
(845)
[HTML 1 KB]
[PDF 451 KB]
(547)
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57102 |
Yuan Hao (袁昊), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Yang Fei (杨霏), Wu Hao (吴昊) |
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4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination |
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Chin. Phys. B
2014 Vol.23 (5): 57102-057102
[Abstract]
(623)
[HTML 1 KB]
[PDF 437 KB]
(581)
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118502 |
Fan Jie (范杰), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) |
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High-voltage SOI lateral MOSFET with a dual vertical field plate |
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Chin. Phys. B
2013 Vol.22 (11): 118502-118502
[Abstract]
(692)
[HTML 1 KB]
[PDF 451 KB]
(736)
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117307 |
Zhao Sheng-Lei (赵胜雷), Chen Wei-Wei (陈伟伟), Yue Tong (岳童), Wang Yi (王毅), Luo Jun (罗俊), Mao Wei (毛维), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2013 Vol.22 (11): 117307-117307
[Abstract]
(493)
[HTML 1 KB]
[PDF 343 KB]
(497)
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106107 |
Tang Cen (汤岑), Xie Gang (谢刚), Zhang Li (张丽), Guo Qing (郭清), Wang Tao (汪涛), Sheng Kuang (盛况) |
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Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes |
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Chin. Phys. B
2013 Vol.22 (10): 106107-106107
[Abstract]
(945)
[HTML 1 KB]
[PDF 725 KB]
(686)
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97303 |
Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Lei Xiao-Yi (雷晓艺), Zhao Sheng-Lei (赵胜雷), Yang Li-Yuan (杨丽媛), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Field plate structural optimization for enhancing the power gain of GaN-based HEMTs |
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Chin. Phys. B
2013 Vol.22 (9): 97303-097303
[Abstract]
(590)
[HTML 1 KB]
[PDF 354 KB]
(1702)
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57304 |
Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Chen Yong-He (陈永和), Yang Li-Yuan (杨丽媛), Wang Chong (王冲), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2013 Vol.22 (5): 57304-057304
[Abstract]
(614)
[HTML 1 KB]
[PDF 610 KB]
(1059)
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26103 |
Xie Gang (谢刚), Tang Cen (汤岑), Wang Tao (汪涛), Guo Qing (郭清), Zhang Bo (张波), Sheng Kuang (盛况), Wai Tung Ng |
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An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient |
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Chin. Phys. B
2013 Vol.22 (2): 26103-026103
[Abstract]
(1062)
[HTML 1 KB]
[PDF 1199 KB]
(1805)
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108502 |
Qiao Ming (乔明), Zhuang Xiang (庄翔), Wu Li-Juan (吴丽娟), Zhang Wen-Tong (章文通), Wen Heng-Juan (温恒娟), Zhang Bo (张波), Li Zhao-Ji (李肇基) |
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Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates |
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Chin. Phys. B
2012 Vol.21 (10): 108502-108502
[Abstract]
(1015)
[HTML 1 KB]
[PDF 2606 KB]
(1585)
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117301 |
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪) |
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Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode |
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Chin. Phys. B
2011 Vol.20 (11): 117301-117301
[Abstract]
(1853)
[HTML 0 KB]
[PDF 413 KB]
(2912)
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